专利内容由知识产权出版社提供
专利名称：Contact Structure of Semiconductor Device发明人：Sung-Li Wang,Ding-Kang Shih,Chin-Hsiang
Lin,Sey-Ping Sun,Clement Hsingjen Wann
申请号：US13672258申请日：20121108
公开号：US20140124842A1公开日：20140508
专利附图：
摘要：The invention relates to a contact structure of a semiconductor device. Anexemplary structure for a contact structure for a semiconductor device comprises asubstrate comprising a major surface and a trench below the major surface; a strained
material filling the trench, wherein a lattice constant of the strained material is differentfrom a lattice constant of the substrate; an inter-layer dielectric (ILD) layer having anopening over the strained material, wherein the opening comprises dielectric sidewallsand a strained material bottom; a semiconductor layer on the sidewalls and bottom ofthe opening; a dielectric layer on the semiconductor layer; and a metal layer filling anopening of the dielectric layer.
申请人：TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
地址：US
国籍：US
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