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专利名称：OPTOELECTRONIC SEMICONDUCTOR
COMPONENT
发明人：STRASSBURG, Martin,HÖPPEL, Lutz,PETER,
Matthias,ZEHNDER, Ulrich,TAKI,Tetsuya,LEBER, Andreas,BUTENDEICH,Rainer,BAUER, Thomas
申请号：EP09748013.1申请日：20090916公开号：EP2338182A1公开日：20110629
摘要：An optoelectronic semiconductor component comprising a semiconductor layersequence (3) based on a nitride compound semiconductor and containing an n-dopedregion (4), a p-doped region (8) and an active zone (5) arranged between the n-dopedregion (4) and the p-doped region (8) is specified. The p-doped region (8) comprises a p-type contact layer (7) composed of InxAlyGa1-x-yN where 0≦̸x≦̸1, 0≦̸y≦̸1and x+y≦̸1. The p-type contact layer (7) adjoins a connection layer (9) composed of ametal, a metal alloy or a transparent conductive oxide, wherein the p-type contact layer(7) has first domains (1) having a Ga-face orientation and second domains (2) having an N-face orientation at an interface with the connection layer (9).
申请人：OSRAM OPTO SEMICONDUCTORS GMBH
地址：Leibnizstrasse 4 93055 Regensburg DE
国籍：DE
代理机构：Epping - Hermann - Fischer
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