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专利名称：Contact Structure of Semiconductor Device发明人：Chun Hsiung Tsai,Yan-Ting Lin申请号：US14093268申请日：20131129
公开号：US20150155359A1公开日：20150604
专利附图：
摘要：The embodiments described above provide mechanisms of forming contactstructures with low resistance. A strained material stack with multiple sub-layers is usedto lower the Schottky barrier height (SBH) of the conductive layers underneath thecontact structures. The strained material stack includes a SiGe main layer, a graded SiG
layer, a GeB layer, a Ge layer, and a SiGe top layer. The GeB layer moves the Schottkybarrier to an interface between GeB and a metal germanide, which greatly reduces theSchottky barrier height (SBH). The lower SBH, the Ge in the SiGe top layer forms metalgermanide and high B concentration in the GeB layer help to reduce the resistance of theconductive layers underneath the contact structures.
申请人：Taiwan Semiconductor Manufacturing Company, Ltd.
地址：Hsin-Chu TW
国籍：TW
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