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专利名称：Methods of fabricating trench isolation
regions with risers
发明人：Chang-gyu Kim,Jae-deok Kim申请号：US08/730463申请日：19961015公开号：US058666A公开日：19990202
摘要：An isolation region is formed on a substrate by forming spaced apart mesas onthe substrate, each mesa including a barrier region which caps the mesa. An insulationriser is then formed in the substrate, disposed between and separated from the spacedapart mesas. Spaced apart trenches are formed in the substrate on opposite sides of theinsulation riser, each trench disposed between the insulation riser and a respective one ofthe mesas. An insulating material layer is formed on the substrate, the insulating materiallayer filling the spaced apart trenches and covering the insulation riser and the mesas,and then is chemical mechanical polished to expose the mesas and thereby form anisolation region spanning the spaced apart trenches. Preferably, barrier spacers areformed on sidewall portions of the mesas, and a surface portion of the substratebetween the barrier regions is thermally oxidized using the barrier regions and thebarrier spacers as an oxidation barrier to form the insulation riser. The isolation regionincludes an insulation riser at the surface of the substrate, extending from the surfaceinto the substrate, and an insulation region on the substrate, covering the insulation riserand extending into the spaced apart trenches. The insulation region may includeinsulation spacers adjacent sidewall portions of the spaced apart trenches, and an
insulation region on the substrate, covering the insulation riser and extending into thespaced apart trenches to contact the insulation spacers.
申请人：SAMSUNG ELECTRONICS CO., LTD.
代理机构：Myers Bigel Sibley & Sajovec
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